Infineon Technologies SPD02N60C3 MOSFETs
N-CHANNEL POWER MOSFET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SPD02N60C3
Base Model
Detailed Description
N-CHANNEL POWER MOSFET
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
SPD02N60C3 Datasheet
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Technical Specifications
Infineon Technologies SPD02N60C3 MOSFETs technical specifications.
General
Series
CoolMOS™
Package / Case
TO-252-3, DPak
Mounting Type
Surface Mount
Lifecycle Status
Active
Current Continuous Drain ID 25 C
1.8A (Tc)
Drain to Source Voltage Vdss
600 V
Drive Voltage Max Rds on Min Rds on
10 V
Fet Type
N-Channel
Gate Charge Qg Max Vgs
12.5 nC @ 10 V
Input Capacitance Ciss Max Vds
200 pF @ 25 V
Alternate Parts Comparison (SPD02N60C3 vs SPD02N80C3 vs SPD02N80C3ATMA1 vs SPD06N80C3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMT | Surface Mount | SMT |
| Series | CoolMOS™ | -- | CoolMOS™ | -- |
| Package / Case | TO-252-3, DPak | -- | TO-252-3, DPAK | -- |
| Lifecycle Status | Active | -- | Active | -- |
| Current Continuous Drain ID 25 C | 1.8A (Tc) | -- | 2A (Tc) | -- |
| Drain to Source Voltage Vdss | 600 V | -- | 800 V | -- |
| Drive Voltage Max Rds on Min Rds on | 10 V | -- | 10 V | -- |
| Fet Type | N-Channel | -- | N-Channel | -- |
| Gate Charge Qg Max Vgs | 12.5 nC @ 10 V | -- | 16 nC @ 10 V | -- |
| Input Capacitance Ciss Max Vds | 200 pF @ 25 V | -- | 290 pF @ 100 V | -- |
| Rds on Max ID Vgs | 3Ohm @ 1.1A, 10V | -- | 2.7Ohm @ 1.2A, 10V | -- |
| Technology | MOSFET (Metal Oxide) | -- | MOSFET (Metal Oxide) | -- |
| Action |
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