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Infineon Technologies IPD14N06S2-80 MOSFETs

IPD14N06 - 55V-60V N-CHANNEL AUT

14,100 ActiveInfineon TechnologiesTO-252-3, DPak (2 Leads + Tab), SC-63$0.96
IPD14N06S2-80 TO-252-3, DPak (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

IPD14N06S2-80
Part Number (MPN)
IPD14N06S2-80
Detailed Description
IPD14N06 - 55V-60V N-CHANNEL AUT
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF IPD14N06S2-80 Datasheet
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Technical Specifications

Infineon Technologies IPD14N06S2-80 MOSFETs technical specifications.

General

Series
OptiMOS™
Package / Case
TO-252-3, DPak
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
17A (Tc)
Drain to Source Voltage Vdss
55 V
Drive Voltage Max Rds on Min Rds on
10 V
Fet Type
N-Channel
Gate Charge Qg Max Vgs
10 nC @ 10 V

Alternate Parts Comparison (IPD14N06S2-80 vs IPD90N06S407ATMA2 vs IPD200N15N3GATMA1 vs IPD50N03S4L06ATMA1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesOptiMOS™OptiMOS™OptiMOS™OptiMOS™
Package / CaseTO-252-3, DPakTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveactive and preferredActiveactive and preferred
Current Continuous Drain ID 25 C17A (Tc)90A (Tc)50A (Tc)50A (Tc)
Drain to Source Voltage Vdss55 V60 V150 V30 V
Drive Voltage Max Rds on Min Rds on10 V10 V8V, 10V4.5V, 10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs10 nC @ 10 V56 nC @ 10 V31 nC @ 10 V31 nC @ 10 V
Rds on Max ID Vgs80mOhm @ 7A, 10V6.9mOhm @ 90A, 10V20mOhm @ 50A, 10V5.5mOhm @ 50A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
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