Infineon Technologies IRF60R217 MOSFETs
MOSFET N-CH 60V 58A DPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF60R217
Detailed Description
MOSFET N-CH 60V 58A DPAK
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
IRF60R217 Datasheet
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Technical Specifications
Infineon Technologies IRF60R217 MOSFETs technical specifications.
General
Series
StrongIRFET™
RoHS
Yes
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Automotive
No
Channel Mode
Enhancement
Alternate Parts Comparison (IRF60R217 vs IPD14N06S2-80 vs IRLR7843TR vs IPD50N03S4L06ATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | StrongIRFET™ | OptiMOS™ | HEXFET® | OptiMOS™ |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Obsolete | active and preferred |
| Current Continuous Drain ID 25 C | 58A (Tc) | 17A (Tc) | 161A (Tc) | 50A (Tc) |
| Drain to Source Voltage Vdss | 60 V | 55 V | 30 V | 30 V |
| Drive Voltage Max Rds on Min Rds on | 6V, 10V | 10 V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 66 nC @ 10 V | 10 nC @ 10 V | 50 nC @ 4.5 V | 31 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 2170 pF @ 25 V | 293 pF @ 25 V | 4380 pF @ 15 V | 2330 pF @ 25 V |
| Rds on Max ID Vgs | 9.9mOhm @ 35A, 10V | 80mOhm @ 7A, 10V | 3.3mOhm @ 15A, 10V | 5.5mOhm @ 50A, 10V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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