Infineon Technologies IRFSL7437PBF MOSFETs
MOSFET N-CH 40V 195A TO262
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRFSL7437PBF
Detailed Description
MOSFET N-CH 40V 195A TO262
Package
TO-262
Lifecycle Status
Active
Datasheet
IRFSL7437PBF Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IRFSL7437PBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
250 A
Rds on Drain Source Resistance
1.8 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (IRFSL7437PBF vs IRFSL3607PBF vs IRFSL3306PBF vs IRFSL3206PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Compliant with Exemption | Compliant with Exemption |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Operating Temperature | - 55°C ~ + 175°C | -- | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 53 ns | -- | 77 ns | 83 ns |
| Pd Power Dissipation | 230 W | -- | 230 W | 300 W |
| Qg Gate Charge | 225 nC | -- | 85 nC | 120 nC |
| Rds on Drain Source Resistance | 1.8 mOhms | -- | 3.3 mOhms | 2.4 mOhms |
| Rise Time | 70 ns | -- | 76 ns | 82 ns |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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