Infineon Technologies IRFSL3206PBF MOSFETs
MOSFET N-CH 60V 120A TO262
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRFSL3206PBF
Detailed Description
MOSFET N-CH 60V 120A TO262
Package
TO-262-3 Long Leads, I2PAK, TO-262AA
Lifecycle Status
Active
Datasheet
IRFSL3206PBF Datasheet
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Technical Specifications
Infineon Technologies IRFSL3206PBF MOSFETs technical specifications.
General
Series
HEXFET®
RoHS
Compliant with Exemption
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging
Tube
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Automotive
No
Alternate Parts Comparison (IRFSL3206PBF vs IRFSL3607PBF vs IRFSL4410ZPBF vs IRFSL5615PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant with Exemption | Yes | Yes | Yes |
| Mounting Type | Through Hole | -- | Through Hole | SMD/SMT |
| Operating Temperature | -55°C ~ 175°C (TJ) | -- | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Pd Power Dissipation | 300 W | -- | 230 W | 144 W |
| Qg Gate Charge | 120 nC | -- | 83 nC | 26 nC |
| Rds on Drain Source Resistance | 2.4 mOhms | -- | 9 mOhms | 34.5 mOhms |
| Technology | MOSFET (Metal Oxide) | -- | Si | Si |
| Transistor Polarity | N-Channel | -- | N-Channel | N-Channel |
| Transistor Type | 1 N-Channel | -- | 1 N-Channel | 1 N-Channel |
| Action |
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