Infineon Technologies IRFSL5615PBF MOSFETs
MOSFET N-CH 150V 33A TO262
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRFSL5615PBF
Detailed Description
MOSFET N-CH 150V 33A TO262
Package
TO-262
Lifecycle Status
Active
Datasheet
IRFSL5615PBF Datasheet
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Technical Specifications
Infineon Technologies IRFSL5615PBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
150 V
ID Continuous Drain Current
33 A
Rds on Drain Source Resistance
34.5 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (IRFSL5615PBF vs IRFSL3607PBF vs IRFSL3306PBF vs IRFSL3206PBF)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Compliant with Exemption | Compliant with Exemption |
| Mounting Type | SMD/SMT | -- | Through Hole | Through Hole |
| Operating Temperature | - 55°C ~ + 175°C | -- | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Pd Power Dissipation | 144 W | -- | 230 W | 300 W |
| Qg Gate Charge | 26 nC | -- | 85 nC | 120 nC |
| Rds on Drain Source Resistance | 34.5 mOhms | -- | 3.3 mOhms | 2.4 mOhms |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Transistor Polarity | N-Channel | -- | N-Channel | N-Channel |
| Transistor Type | 1 N-Channel | -- | 1 N-Channel | 1 N-Channel |
| Action |
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