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Infineon Technologies IRFR13N20DTRPBF MOSFETs

MOSFET N-CH 200V 13A DPAK

800Infineon TechnologiesIRFR13NTO-252-3, DPAK (2 Leads + Tab), SC-63$1.17
IRFR13N20DTRPBF TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

IRFR13N20DTRPBF
Part Number (MPN)
IRFR13N20DTRPBF
Base Model
Detailed Description
MOSFET N-CH 200V 13A DPAK
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Obsolete
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Ordering Code Family

IRFR13N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Infineon Technologies IRFR13N20DTRPBF MOSFETs technical specifications.

General

Series
HEXFET®
RoHS
ROHS3 Compliant
Number of Pins
2
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Avalanche Energy Rating Eas
130 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE

Alternate Parts Comparison (IRFR13N20DTRPBF vs IRFR13N15DTRPBF vs IRFR13N20DTR vs IPD14N06S2-80)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Lifecycle StatusObsoletediscontinuedObsoleteActive
SeriesHEXFET®--HEXFET®OptiMOS™
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)---55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSROHS3 CompliantYesYes--
Current Continuous Drain ID 25 C13A (Tc)--13A (Tc)17A (Tc)
Drain to Source Voltage Vdss200 V--200 V55 V
Drive Voltage Max Rds on Min Rds on10 V--10V10 V
Fet TypeN-Channel--N-ChannelN-Channel
Gate Charge Qg Max Vgs38 nC @ 10 V--38 nC @ 10 V10 nC @ 10 V
Input Capacitance Ciss Max Vds830 pF @ 25 V--830 pF @ 25 V293 pF @ 25 V
PackageTape & Reel (TR)TO-252-3TO-252-3, DPak (2 Leads + Tab), SC-63--
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