Infineon Technologies IPD200N15N3GATMA1 MOSFETs
MOSFET N-CH 150V 50A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD200N15N3GATMA1
Detailed Description
MOSFET N-CH 150V 50A TO252-3
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
IPD200N15N3GATMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD200N15N3GATMA1 MOSFETs technical specifications.
General
Series
OptiMOS™
RoHS
Compliant with Exemption
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-252-3, DPAK
Packaging
TAPE & REEL
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Alternate Parts Comparison (IPD200N15N3GATMA1 vs IPD14N06S2-80 vs IPD50N03S4L06ATMA1 vs IPD031N06L3GATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
| Package / Case | TO-252-3, DPAK | TO-252-3, DPak | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | active and preferred | Active |
| Current Continuous Drain ID 25 C | 50A (Tc) | 17A (Tc) | 50A (Tc) | 100A (Tc) |
| Drain to Source Voltage Vdss | 150 V | 55 V | 30 V | 60 V |
| Drive Voltage Max Rds on Min Rds on | 8V, 10V | 10 V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 31 nC @ 10 V | 10 nC @ 10 V | 31 nC @ 10 V | 79 nC @ 4.5 V |
| Input Capacitance Ciss Max Vds | 1820 pF @ 75 V | 293 pF @ 25 V | 2330 pF @ 25 V | 13000 pF @ 30 V |
| Rds on Max ID Vgs | 20mOhm @ 50A, 10V | 80mOhm @ 7A, 10V | 5.5mOhm @ 50A, 10V | 3.1mOhm @ 100A, 10V |
| Action |
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