Infineon Technologies IPD80R4K5P7 MOSFETs
POWER FIELD-EFFECT TRANSISTOR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD80R4K5P7
Base Model
Detailed Description
POWER FIELD-EFFECT TRANSISTOR
Package
TO-252
Lifecycle Status
Active
Datasheet
IPD80R4K5P7 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD80R4K5P7 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMT
Lifecycle Status
Active
Idpuls Max
2.6 A
Ptot Max
13.0 W
Polarity
N
Rthjc Max
9.4 K/W
Rthja Max
62.0 K/W
Vds Max
800.0 V
IC Max
1.5 A
Alternate Parts Comparison (IPD80R4K5P7 vs IPD80R1K4CEATMA1 vs IPD80R2K8CEATMA1 vs IPD80R4K5P7ATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 |
| Mounting Type | SMT | SMD/SMT | SMD/SMT | -- |
| Lifecycle Status | Active | -- | -- | active and preferred |
| IC Max | 1.5 A | -- | -- | -- |
| Idpuls Max | 2.6 A | -- | -- | -- |
| Operating Temperature Max | 150.0 °C | -- | -- | -- |
| Operating Temperature Min | -55.0 °C | -- | -- | -- |
| Polarity | N | -- | -- | -- |
| Ptot Max | 13.0 W | -- | -- | -- |
| Rds on Max | 4500.0 mΩ | -- | -- | -- |
| Rthja Max | 62.0 K/W | -- | -- | -- |
| Action |
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