Infineon Technologies IPD90R1K2C3 MOSFETs
Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD90R1K2C3
Detailed Description
Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
Package
TO-252
Lifecycle Status
Active
Datasheet
IPD90R1K2C3 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD90R1K2C3 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMT
Vds Max
900.0 V
Ptot Max
83.0 W
Idpuls Max
10.0 A
Rthjc Max
1.5 K/W
Rthja Max
62.0 K/W
Polarity
N
IC Max
5.1 A
Rds on Max
1200.0 mΩ
Alternate Parts Comparison (IPD90R1K2C3 vs IPD50N04S3-08 vs IPD30N06S2L-13 vs IPD60R600C6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| IC Max | 5.1 A | 50.0 A | 30.0 A | 7.3 A |
| Idpuls Max | 10.0 A | 200.0 A | 120.0 A | 19.0 A |
| Operating Temperature Min | -55.0 °C | -55.0 °C | -55.0 °C | -55.0 °C |
| Package | TO-252 | TO-252 | TO-252 | TO-252 |
| Polarity | N | N | N | N |
| Ptot Max | 83.0 W | 68.0 W | 136.0 W | 63.0 W |
| Rds on Max | 1200.0 mΩ | 7.5 mΩ | 13.0 mΩ | 600.0 mΩ |
| Rthjc Max | 1.5 K/W | 2.2 K/W | 1.1 K/W | 2.0 K/W |
| Vds Max | 900.0 V | 40.0 V | 55.0 V | 600.0 V |
| Vgs Th Max | 3.5 V | 4.0 V | 2.0 V | 3.5 V |
| Vgs Th Min | 2.5 V | 2.1 V | 1.2 V | 2.5 V |
| Action |
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