Infineon Technologies IPD80R1K4CEATMA1 MOSFETs
MOSFET N-CH 800V 3.9A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD80R1K4CEATMA1
Base Model
Detailed Description
MOSFET N-CH 800V 3.9A TO252-3
Package
PG-TO252-3
Lifecycle Status
Active
Datasheet
IPD80R1K4CEATMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD80R1K4CEATMA1 MOSFETs technical specifications.
General
Series
CoolMOS CE
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
800 V
ID Continuous Drain Current
3.9 A
Rds on Drain Source Resistance
1.4 Ohms
Alternate Parts Comparison (IPD80R1K4CEATMA1 vs IPD80R4K5P7ATMA1 vs IPD80R600P7ATMA1 vs IPD80R2K0P7ATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 |
| Lifecycle Status | -- | active and preferred | active and preferred | Active |
| Completely Lead Free | -- | No | No | No |
| Dry Pack | -- | NON DRY | NON DRY | NON DRY |
| Halogen Free | -- | Yes | Yes | Yes |
| Lead Free | -- | Yes | Yes | Yes |
| Action |
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