Infineon Technologies IPD640N06LG MOSFETs
OptiMOS® Power-Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD640N06LG
Detailed Description
OptiMOS® Power-Transistor
Package
TO-252
Lifecycle Status
Not For New Designs
Datasheet
IPD640N06LG Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD640N06LG MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Package / Case
TO-252
Operating Temperature
-55 °C ~ 175 °C
Lifecycle Status
Not For New Designs
Contact Plating
Tin
Continuous Drain Current ID
18 A
Current Rating
18 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
64mO
Alternate Parts Comparison (IPD640N06LG vs IPD60R600C6 vs IPD50N04S3-08 vs IPD90R1K2C3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Yes |
| Idpuls Max | 72.0 A | 19.0 A | 200.0 A | 10.0 A |
| Operating Temperature Min | -55.0 °C | -55.0 °C | -55.0 °C | -55.0 °C |
| Polarity | N | N | N | N |
| Ptot Max | 47.0 W | 63.0 W | 68.0 W | 83.0 W |
| Rds on Max | 85.0 mΩ | 600.0 mΩ | 7.5 mΩ | 1200.0 mΩ |
| Vds Max | 60.0 V | 600.0 V | 40.0 V | 900.0 V |
| Vgs Th Max | 2.0 V | 3.5 V | 4.0 V | 3.5 V |
| Vgs Th Min | 1.2 V | 2.5 V | 2.1 V | 2.5 V |
| Operating Temperature Max | 175.0 °C | -- | 175.0 °C | 150.0 °C |
| IC Max | -- | 7.3 A | 50.0 A | 5.1 A |
| Package | -- | TO-252 | TO-252 | TO-252 |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NTD18N06LT4GonsemiSimilaronsemi
Pin YesPkg YesElec Mixed
N-Ch MOSFET, 60V, 18A, 54mΩ, DPAK
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