Infineon Technologies IPD122N10N3GATMA1 MOSFETs
MOSFET N-CH 100V 59A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD122N10N3GATMA1
Detailed Description
MOSFET N-CH 100V 59A TO252-3
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
IPD122N10N3GATMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD122N10N3GATMA1 MOSFETs technical specifications.
General
Series
OptiMOS™
RoHS
Compliant with Exemption
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Channel Type
N
Alternate Parts Comparison (IPD122N10N3GATMA1 vs IPD14N06S2-80 vs IPD50N03S4L06ATMA1 vs IPD90N06S407ATMA2)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
| Package / Case | TO-252-3, DPAK | TO-252-3, DPak | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | active and preferred | active and preferred |
| Current Continuous Drain ID 25 C | 59A (Tc) | 17A (Tc) | 50A (Tc) | 90A (Tc) |
| Drain to Source Voltage Vdss | 100 V | 55 V | 30 V | 60 V |
| Drive Voltage Max Rds on Min Rds on | 6V, 10V | 10 V | 4.5V, 10V | 10 V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 35 nC @ 10 V | 10 nC @ 10 V | 31 nC @ 10 V | 56 nC @ 10 V |
| Rds on Max ID Vgs | 12.2mOhm @ 46A, 10V | 80mOhm @ 7A, 10V | 5.5mOhm @ 50A, 10V | 6.9mOhm @ 90A, 10V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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