Infineon Technologies IPB017N10N5 MOSFETs
Trans MOSFET N-CH 100V 180A 8-Pin(7+Tab) D2PAK T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB017N10N5
Base Model
Detailed Description
Trans MOSFET N-CH 100V 180A 8-Pin(7+Tab) D2PAK T/R
Package
TO-263-7
Lifecycle Status
Active
Datasheet
IPB017N10N5 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPB017N10N5 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMD
IC Max
273.0 A
Idpuls Max
720.0 A
Ptot Max
375.0 W
Polarity
N
Rthjc Max
0.4 K/W
Rthja Max
62.0 K/W
Vds Max
100.0 V
Rds on Max
1.7 mΩ
Alternate Parts Comparison (IPB017N10N5 vs IPB017N10N5LFATMA1 vs IPB017N08N5 vs IPB035N08N3GATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-263-7 | TO-263-7 | TO-263-3 | PG-TO263-3 |
| Mounting Type | SMD | -- | SMD | SMD/SMT |
| Battery Voltage | 48-72 V | -- | 36-48 V | -- |
| IC Max | 273.0 A | -- | 177.0 A | -- |
| Idpuls Max | 720.0 A | -- | 480.0 A | -- |
| Operating Temperature Max | 175.0 °C | -- | 175.0 °C | -- |
| Operating Temperature Min | -55.0 °C | -- | -55.0 °C | -- |
| Polarity | N | -- | N | -- |
| Ptot Max | 375.0 W | -- | 375.0 W | -- |
| Rds on Max | 1.7 mΩ | -- | 1.7 mΩ | -- |
| Rthja Max | 62.0 K/W | -- | 62.0 K/W | -- |
| Action |
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