Infineon Technologies IPB017N08N5 MOSFETs
MOSFETs N-Ch 80V 120A D2PAK-2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB017N08N5
Base Model
Detailed Description
MOSFETs N-Ch 80V 120A D2PAK-2
Package
TO-263-3
Lifecycle Status
Active
Datasheet
IPB017N08N5 Datasheet
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Technical Specifications
Infineon Technologies IPB017N08N5 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMD
Vds Max
80.0 V
Ptot Max
375.0 W
Idpuls Max
480.0 A
Rthjc Max
0.4 K/W
Rthja Max
62.0 K/W
Polarity
N
Rds on Max
1.7 mΩ
IC Max
177.0 A
Alternate Parts Comparison (IPB017N08N5 vs IPB017N10N5LFATMA1 vs IPB017N10N5 vs IRF9530NSTRLPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-263-3 | TO-263-7 | TO-263-7 | TO-263-3 |
| Mounting Type | SMD | -- | SMD | -- |
| Battery Voltage | 36-48 V | -- | 48-72 V | -- |
| IC Max | 177.0 A | -- | 273.0 A | -- |
| Idpuls Max | 480.0 A | -- | 720.0 A | -- |
| Operating Temperature Max | 175.0 °C | -- | 175.0 °C | -- |
| Operating Temperature Min | -55.0 °C | -- | -55.0 °C | -- |
| Polarity | N | -- | N | -- |
| Ptot Max | 375.0 W | -- | 375.0 W | -- |
| Rds on Max | 1.7 mΩ | -- | 1.7 mΩ | -- |
| Rthja Max | 62.0 K/W | -- | 62.0 K/W | -- |
| Action |
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