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Infineon Technologies IPB017N08N5 MOSFETs

MOSFETs N-Ch 80V 120A D2PAK-2

622 ActiveInfineon TechnologiesIPB017NTO-263-3$10.26
IPB017N08N5 TO-263-3 package illustration

Same model may have multiple batches, images only for reference.

IPB017N08N5
Part Number (MPN)
IPB017N08N5
Base Model
Detailed Description
MOSFETs N-Ch 80V 120A D2PAK-2
Package
TO-263-3
Lifecycle Status
Active
Datasheet
PDF IPB017N08N5 Datasheet
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Ordering Code Family

IPB017N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Infineon Technologies IPB017N08N5 MOSFETs technical specifications.

General

RoHS
Yes
Mounting Type
SMD
Vds Max
80.0 V
Ptot Max
375.0 W
Idpuls Max
480.0 A
Rthjc Max
0.4 K/W
Rthja Max
62.0 K/W
Polarity
N
Rds on Max
1.7 mΩ
IC Max
177.0 A

Related Parts Comparison (IPB017N08N5 vs IPB017N10N5LFATMA1 vs IPB017N10N5 vs IRF9530NSTRLPBF)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageTO-263-3TO-263-7TO-263-7TO-263-3
Mounting TypeSMD--SMD--
Battery Voltage36-48 V--48-72 V--
IC Max177.0 A--273.0 A--
Idpuls Max480.0 A--720.0 A--
Operating Temperature Max175.0 °C--175.0 °C--
Operating Temperature Min-55.0 °C---55.0 °C--
PolarityN--N--
Ptot Max375.0 W--375.0 W--
Rds on Max1.7 mΩ--1.7 mΩ--
Rthja Max62.0 K/W--62.0 K/W--
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