Infineon Technologies IPB160N04S4-H1 MOSFETs
MOSFETs N-Ch 40V 160A D2PAK-6 OptiMOS-T2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB160N04S4-H1
Base Model
Detailed Description
MOSFETs N-Ch 40V 160A D2PAK-6 OptiMOS-T2
Package
TO-263-7
Lifecycle Status
Active
Datasheet
IPB160N04S4-H1 Datasheet
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Technical Specifications
Infineon Technologies IPB160N04S4-H1 MOSFETs technical specifications.
General
RoHS
Yes
Rthjc Max
0.9 K/W
Idpuls Max
640.0 A
Ptot Max
167.0 W
Qualification
Automotive
Vds Max
40.0 V
Vgs Th Min
2.0 V
Rds on Max
1.6 mΩ
Vgs Th Max
4.0 V
Polarity
N
Related Parts Comparison (IPB160N04S4-H1 vs IPB160N04S3-H2 vs IPB017N10N5LFATMA1 vs IPB015N08N5ATMA1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | -- | Yes | Yes |
| Package | TO-263-7 | -- | TO-263-7 | TO-263-7 |
| ID Max | 160.0 A | 160.0 A | -- | -- |
| Idpuls Max | 640.0 A | 640.0 A | -- | -- |
| Operating Temperature Max | 175.0 °C | 175.0 °C | -- | -- |
| Operating Temperature Min | -55.0 °C | -55.0 °C | -- | -- |
| Polarity | N | N-Channel | -- | -- |
| Ptot Max | 167.0 W | 214.0 W | -- | -- |
| Qg Max | 105.0 nC | 110.0 nC | -- | -- |
| Qualification | Automotive | Automotive | -- | -- |
| Rds on Max | 1.6 mΩ | 2.1 mΩ | -- | -- |
| Rthjc Max | 0.9 K/W | 0.7 K/W | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
This part is listed as a cross for
BUK962R6-40E,118NexperiaDirectInfineon
N-channel Power MOSFET featuring a 40V drain-source voltage and 100A continuous drain current.
BUK963R1-40E,118NexperiaDirectInfineon
N-channel Power MOSFET, D2PAK package, surface mount, single element.
BUK964R1-40E,118NexperiaDirectInfineon
N-channel enhancement mode power MOSFET with a 40V drain-source voltage and 75A continuous drain current.
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