Infineon Technologies IKW50N60TA BJTs
IKW50N60 - AUTOMOTIVE IGBT DISCR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IKW50N60TA
Base Model
Detailed Description
IKW50N60 - AUTOMOTIVE IGBT DISCR
Package
TO-247-3
Lifecycle Status
Active
Datasheet
IKW50N60TA Datasheet
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Technical Specifications
Infineon Technologies IKW50N60TA BJTs technical specifications.
General
Series
TRENCHSTOP
RoHS
Yes
Mounting Type
Through Hole
Technology
Si
Configuration
Single
Collector Emitter Voltage Vceo Max
600 V
Collector Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
- 20 V, 20 V
Continuous Collector Current at 25 C
80 A
Pd Power Dissipation
333 W
Alternate Parts Comparison (IKW50N60TA vs IKW50N60H3 vs IKW50N60H3FKSA1 vs IKW50N60TFKSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | TO-247-3 | -- | TO-247-3 | TO-247-3 |
| Series | TRENCHSTOP | Trenchstop IGBT3 | -- | -- |
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Collector Emitter Saturation Voltage | 1.9 V | 1.85 V | -- | -- |
| Collector Emitter Voltage Vceo Max | 600 V | 600 V | -- | -- |
| Configuration | Single | Single | -- | -- |
| Continuous Collector Current at 25 C | 80 A | 100 A | -- | -- |
| Continuous Collector Current IC Max | 50 A | 50 A | -- | -- |
| Gate Emitter Leakage Current | 100 nA | 100 nA | -- | -- |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | - 20 V, 20 V | -- | -- |
| Maximum Operating Temperature C | + 175 | 175 | -- | -- |
| Action |
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Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
