Infineon Technologies IHW30N110R3 BJTs
IGBTs IGBT PRODUCTS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IHW30N110R3
Base Model
Detailed Description
IGBTs IGBT PRODUCTS
Package
TO-247-3
Lifecycle Status
Active
Datasheet
IHW30N110R3 Datasheet
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Technical Specifications
Infineon Technologies IHW30N110R3 BJTs technical specifications.
General
Series
RC
RoHS
Yes
Mounting Type
Through Hole
Technology
Si
Configuration
Single
Collector Emitter Voltage Vceo Max
1.1 kV
Collector Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
- 20 V, 20 V
Continuous Collector Current at 25 C
60 A
Pd Power Dissipation
333 W
Alternate Parts Comparison (IHW30N110R3 vs IHW30N65R5 vs IHW30N120R5XKSA1 vs IHW20N135R5)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | -- | Yes | Yes |
| Package | TO-247-3 | -- | PG-TO247-3 | TO-247-3 |
| Technology | Si | -- | -- | IGBT RC Soft Switching |
| Series | RC | -- | -- | -- |
| Mounting Type | Through Hole | -- | -- | -- |
| Collector Emitter Saturation Voltage | 1.55 V | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 1.1 kV | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Continuous Collector Current at 25 C | 60 A | -- | -- | -- |
| Gate Emitter Leakage Current | 100 nA | -- | -- | -- |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | -- | -- | -- |
| Maximum Operating Temperature C | + 175 | -- | -- | -- |
| Action |
More Parts in BJTs
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