Infineon Technologies IKW50N60H3 BJTs
Trans IGBT Chip N-CH 600V 100A 333W 3-Pin(3+Tab) TO-247 Tube
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IKW50N60H3
Base Model
Detailed Description
Trans IGBT Chip N-CH 600V 100A 333W 3-Pin(3+Tab) TO-247 Tube
Package
TO-247
Lifecycle Status
Unconfirmed
Datasheet
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Technical Specifications
Infineon Technologies IKW50N60H3 BJTs technical specifications.
General
Series
Trenchstop IGBT3
RoHS
Compliant
Number of Pins
3
Package / Case
Tube
Packaging
Tube
Mounting Type
Through Hole
Operating Temperature
- 40°C ~ + 175°C
Lifecycle Status
Unconfirmed
Automotive
No
Channel Type
N
Alternate Parts Comparison (IKW50N60H3 vs IKW50N60TA vs IKW50N65ES5 vs IKW50N60DTP)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Yes |
| Technology | Si | Si | IGBT TRENCHSTOP™ 5 | IGBT TRENCHSTOP™ Perf. |
| Series | Trenchstop IGBT3 | TRENCHSTOP | -- | -- |
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Collector Emitter Saturation Voltage | 1.85 V | 1.9 V | -- | -- |
| Collector Emitter Voltage Vceo Max | 600 V | 600 V | -- | -- |
| Configuration | Single | Single | -- | -- |
| Continuous Collector Current at 25 C | 100 A | 80 A | -- | -- |
| Continuous Collector Current IC Max | 50 A | 50 A | -- | -- |
| Gate Emitter Leakage Current | 100 nA | 100 nA | -- | -- |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | - 20 V, 20 V | -- | -- |
| Maximum Operating Temperature C | 175 | + 175 | -- | -- |
| Action |
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