Infineon Technologies IHW30N65R5 BJTs
IHW30N65 - DISCRETE IGBT WITH AN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IHW30N65R5
Base Model
Detailed Description
IHW30N65 - DISCRETE IGBT WITH AN
Lifecycle Status
Active
Datasheet
IHW30N65R5 Datasheet
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Technical Specifications
Infineon Technologies IHW30N65R5 BJTs technical specifications.
General
Lifecycle Status
Active
Alternate Parts Comparison (IHW30N65R5 vs IHW30N110R3 vs IHW30N120R5XKSA1 vs IHW20N120R3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Lifecycle Status | Active | -- | active and preferred | -- |
| Package | -- | TO-247-3 | PG-TO247-3 | TO-247-3 |
| Series | -- | RC | -- | RC |
| Mounting Type | -- | Through Hole | -- | Through Hole |
| Collector Emitter Saturation Voltage | -- | 1.55 V | -- | 1.48 V |
| Collector Emitter Voltage Vceo Max | -- | 1.1 kV | -- | 1.2 kV |
| Configuration | -- | Single | -- | Single |
| Continuous Collector Current at 25 C | -- | 60 A | -- | 40 A |
| Gate Emitter Leakage Current | -- | 100 nA | -- | 100 nA |
| Maximum Gate Emitter Voltage | -- | - 20 V, 20 V | -- | - 20 V, 20 V |
| Maximum Operating Temperature C | -- | + 175 | -- | + 175 |
| Minimum Operating Temperature C | -- | - 40 | -- | - 40 |
| Action |
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