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Infineon Technologies IHW30N65R5 BJTs

IHW30N65 - DISCRETE IGBT WITH AN

62 ActiveInfineon TechnologiesIHW30N$4.94
IHW30N65R5 package illustration

Same model may have multiple batches, images only for reference.

IHW30N65R5
Part Number (MPN)
IHW30N65R5
Base Model
Detailed Description
IHW30N65 - DISCRETE IGBT WITH AN
Lifecycle Status
Active
Datasheet
PDF IHW30N65R5 Datasheet
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Ordering Code Family

IHW30N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Infineon Technologies IHW30N65R5 BJTs technical specifications.

General

Lifecycle Status
Active

Alternate Parts Comparison (IHW30N65R5 vs IHW30N110R3 vs IHW30N120R5XKSA1 vs IHW20N120R3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Lifecycle StatusActive--active and preferred--
Package--TO-247-3PG-TO247-3TO-247-3
Series--RC--RC
Mounting Type--Through Hole--Through Hole
Collector Emitter Saturation Voltage--1.55 V--1.48 V
Collector Emitter Voltage Vceo Max--1.1 kV--1.2 kV
Configuration--Single--Single
Continuous Collector Current at 25 C--60 A--40 A
Gate Emitter Leakage Current--100 nA--100 nA
Maximum Gate Emitter Voltage--- 20 V, 20 V--- 20 V, 20 V
Maximum Operating Temperature C--+ 175--+ 175
Minimum Operating Temperature C--- 40--- 40
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