Infineon Technologies BSC0504NSI MOSFETs
Metal Oxide Semiconductor Field Effect Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC0504NSI
Detailed Description
Metal Oxide Semiconductor Field Effect Transistor
Package
TDSON-8
Lifecycle Status
Active
Datasheet
BSC0504NSI Datasheet
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Technical Specifications
Infineon Technologies BSC0504NSI MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMD
Idpuls Max
288.0 A
Ptot Max
30.0 W
Polarity
N
Rthja Max
50.0 K/W
Rthjc Max
4.2 K/W
Vds Max
30.0 V
Rds on Max
4.7 mΩ
Special Features
Monolithically Integrated Schottky-like Diode
Alternate Parts Comparison (BSC0504NSI vs BSC010N04LS vs BSC030N08NS5ATMA1 vs BSC024NE2LS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TDSON-8 | TDSON-8 | PG-TDSON-8 | TDSON-8 |
| IC Max | 72.0 A | -- | -- | 110.0 A |
| Idpuls Max | 288.0 A | -- | -- | 440.0 A |
| Operating Temperature Max | 150.0 °C | -- | -- | 150.0 °C |
| Operating Temperature Min | -55.0 °C | -- | -- | -55.0 °C |
| Polarity | N | -- | -- | N |
| Ptot Max | 30.0 W | -- | -- | 48.0 W |
| Rds on Max | 4.7 mΩ | -- | -- | 3.4 mΩ |
| Vds Max | 30.0 V | -- | -- | 25.0 V |
| Vgs Th Max | 2.0 V | -- | -- | 2.0 V |
| Vgs Th Min | 1.2 V | -- | -- | 1.2 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
BSC030N08NS5ATMA1Infineon TechnologiesMOSFET N-CH 80V 100A TDSON [TDSON-8 | Active | RoHS Compliant].
