Infineon Technologies BSC0910NDIATMA1 MOSFETs
MOSFET 2N-CH 25V 11A/31A TISON8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC0910NDIATMA1
Detailed Description
MOSFET 2N-CH 25V 11A/31A TISON8
Package
TISON-8
Lifecycle Status
Active
Datasheet
BSC0910NDIATMA1 Datasheet
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Technical Specifications
Infineon Technologies BSC0910NDIATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Lead Free
Yes
Halogen Free
Yes
Package
TISON-8
Alternate Parts Comparison (BSC0910NDIATMA1 vs BSC010N04LS vs BSC016N06NS vs BSC028N06NS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TISON-8 | TDSON-8 | SuperSO8 | SuperSO8 |
| Feature AEC Qualified | -- | Yes | No | No |
| Feature Auto Motive | -- | Yes | No | No |
| Feature Cecc Qualified | -- | No | No | No |
| Feature Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Feature Channel Type | -- | N | N | N |
| Feature Configuration | -- | Single Quad Drain Triple Source | Single Quad Drain Triple Source | Single Quad Drain Triple Source |
| Feature Maximum Continuous Drain Current a | -- | 38 | 30 | 100 |
| Feature Maximum Drain Source Resistance Mohm | -- | 1@10V | 1.6@10V | 2.8@10V |
| Feature Maximum Drain Source Voltage V | -- | 40 | 60 | 60 |
| Feature Maximum Gate Source Voltage V | -- | ±20 | 20 | ±20 |
| Action |
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