Infineon Technologies BSC028N06NS MOSFETs
MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS 3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSC028N06NS
Base Model
Detailed Description
MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS 3
Package
SuperSO8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies BSC028N06NS MOSFETs technical specifications.
General
RoHS
True
Feature Process Technology
OptiMOS
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
60
Feature Maximum Gate Source Voltage V
±20
Feature Maximum Continuous Drain Current a
100
Feature Maximum Drain Source Resistance Mohm
2.8@10V
Alternate Parts Comparison (BSC028N06NS vs BSC028N06LS3G vs BSC028N06NSTATMA1 vs BSC030N08NS5)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | True | True | True | True |
| Package | SuperSO8 | TDSON-8 | PG-TDSON-8 | SuperSO8 |
| Feature AEC Qualified | No | -- | -- | -- |
| Feature Auto Motive | No | -- | -- | -- |
| Feature Cecc Qualified | No | -- | -- | -- |
| Feature Channel Mode | Enhancement | -- | -- | -- |
| Feature Channel Type | N | -- | -- | -- |
| Feature Configuration | Single Quad Drain Triple Source | -- | -- | -- |
| Feature Maximum Continuous Drain Current a | 100 | -- | -- | -- |
| Feature Maximum Drain Source Resistance Mohm | 2.8@10V | -- | -- | -- |
| Feature Maximum Drain Source Voltage V | 60 | -- | -- | -- |
| Feature Maximum Gate Source Voltage V | ±20 | -- | -- | -- |
| Action |
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