Diodes Incorporated MJD32C-13 BJTs
TRANS PNP 100V 3A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD32C-13
Detailed Description
TRANS PNP 100V 3A TO252-3
Package
TO-252-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated MJD32C-13 BJTs technical specifications.
General
Series
MJD32C
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
PNP
Configuration
Single
Collector Emitter Voltage Vceo Max
100 V
Collector Base Voltage Vcbo
100 V
Emitter Base Voltage Vebo
6 V
Collector Emitter Saturation Voltage
1.2 V
Related Parts Comparison (MJD32C-13 vs MJD32CQ-13 vs MJD31CQ-13 vs MJD31C-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Compliant with Exemption |
| Collector Base Voltage Vcbo | 100 V | 100 V | 100 V | 100 V |
| Collector Emitter Saturation Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Collector Emitter Voltage Vceo Max | 100 V | 100 V | 100 V | 100 V |
| Configuration | Single | Single | Single | Single |
| Emitter Base Voltage Vebo | 6 V | 6 V | 6 V | 6 V |
| Gain Bandwidth Product Ft | 3 MHz | 3 MHz | 3 MHz | 3 MHz |
| Maximum Dc Collector Current | 3 A | 3 A | 3 A | 3 A |
| Package | TO-252-3 | TO-252-3 | TO-252-3 | Tape & Reel (TR) |
| Pd Power Dissipation | 2.1 W | 15 W | 15 W | 2.1 W |
| Action |
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