Diodes Incorporated 2DB1182Q-13 BJTs
TRANS PNP 32V 2A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2DB1182Q-13
Detailed Description
TRANS PNP 32V 2A TO252-3
Package
TO-252-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated 2DB1182Q-13 BJTs technical specifications.
General
Series
2DB11
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
PNP
Configuration
Single
Collector Emitter Voltage Vceo Max
32 V
Collector Base Voltage Vcbo
40 V
Emitter Base Voltage Vebo
5 V
Collector Emitter Saturation Voltage
800 mV
Alternate Parts Comparison (2DB1182Q-13 vs DXT696BK-13 vs DDTC114ECA-7-F vs BC847C-7-F)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252-3 | TO-252-3 | SOT23-3 | SOT23-3 |
| Series | 2DB11 | -- | DDTC114 | BC847C |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Configuration | Single | -- | Single | Single |
| Dc Collector Base Gain Hfe Min | 120 | -- | 30 | 420 at 2 mA, 5 V |
| Pd Power Dissipation | 10 W | -- | 200 mW | 310 mW |
| Transistor Polarity | PNP | -- | NPN | NPN |
| Unit Weight | 0.011640 oz | -- | 0.000282 oz | 0.000282 oz |
| Action |
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