Diodes Incorporated MJD31CQ-13 BJTs
TRANS NPN 100V 3A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD31CQ-13
Detailed Description
TRANS NPN 100V 3A TO252-3
Package
TO-252-3
Lifecycle Status
Active
Datasheet
MJD31CQ-13 Datasheet
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Technical Specifications
Diodes Incorporated MJD31CQ-13 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
100 V
Collector Base Voltage Vcbo
100 V
Emitter Base Voltage Vebo
6 V
Collector Emitter Saturation Voltage
1.2 V
Maximum Dc Collector Current
3 A
Alternate Parts Comparison (MJD31CQ-13 vs MJD32C-13 vs MJD32CUQ-13 vs MJD350-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| RoHS | Yes | Yes | Yes | Yes |
| Collector Base Voltage Vcbo | 100 V | 100 V | 120 V | 300 V |
| Collector Emitter Saturation Voltage | 1.2 V | 1.2 V | 700 mV | 500 mV |
| Collector Emitter Voltage Vceo Max | 100 V | 100 V | 100 V | 300 V |
| Configuration | Single | Single | Single | Single |
| Emitter Base Voltage Vebo | 6 V | 6 V | 7 V | 7 V |
| Gain Bandwidth Product Ft | 3 MHz | 3 MHz | 3 MHz | 10 MHz |
| Maximum Dc Collector Current | 3 A | 3 A | 3 A | 500 mA |
| Package | TO-252-3 | TO-252-3 | DPAK-3 | TO-252-3 |
| Pd Power Dissipation | 15 W | 2.1 W | 2.1 W | 15 W |
| Action |
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