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Diodes Incorporated FMMT918TA RF BJT

FMMT918TA by Diodes Incorporated · RF BJT · TO-236-3

In StockDiodes IncorporatedTO-236-3
FMMT918TA TO-236-3 package illustration

Same model may have multiple batches, images only for reference.

FMMT918TA
Part Number (MPN)
FMMT918TA
Package
TO-236-3
Lifecycle Status
Obsolete
Datasheet
PDF FMMT918TA Datasheet
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Technical Specifications

Diodes Incorporated FMMT918TA RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
600MHz
Noise Figure Db Typ F
6dB @ 60MHz
Gain
15dB
Power Max
330mW

Alternate Parts Comparison (FMMT918TA vs FMMT722TA vs FMMT723TA vs FMMT458QTA)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSMD/SMTSMD/SMTSMD/SMT
RoHSYesYesYesYes
PackageTO-236-3SOT23-3SOT23-3SOT23-3
Series--FMMT72FMMT72FMMT458
Collector Base Voltage Vcbo--70 V100 V400 V
Collector Emitter Saturation Voltage--175 mV210 mV500 mV
Collector Emitter Voltage Vceo Max--70 V100 V400 V
Configuration--SingleSingleSingle
Continuous Collector Current--- 1.5 A- 1 A225 mA
Dc Collector Base Gain Hfe Min--300 at 10 mA, 5 V, 300 at 100 mA, 5 V, 175 at 1 A, 5 V, 40 at 1.5 A, 5 V300 at 10 mA, 10 V, 300 at 100 mA, 10 V, 250 at 500 mA, 10 V15
Dc Current Gain Hfe Max--300 at 10 mA, 5 V300 at 10 mA, 10 V300
Emitter Base Voltage Vebo--7 V7 V7 V
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