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Diodes Incorporated BFQ31ATA RF BJT

BFQ31ATA by Diodes Incorporated · RF BJT · TO-236-3

In StockDiodes IncorporatedTO-236-3
BFQ31ATA TO-236-3 package illustration

Same model may have multiple batches, images only for reference.

BFQ31ATA
Part Number (MPN)
BFQ31ATA
Package
TO-236-3
Lifecycle Status
Obsolete
Datasheet
PDF BFQ31ATA Datasheet
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Technical Specifications

Diodes Incorporated BFQ31ATA RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
600MHz
Noise Figure Db Typ F
6dB @ 60MHz
Power Max
330mW
Dc Current Gain Hfe Min IC Vce
100 @ 3mA, 1V

Alternate Parts Comparison (BFQ31ATA vs BFQ31ATC vs BFS17NQTA vs MMBTH24-7-F)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSMD/SMTSMD/SMT
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)- 55°C ~ + 150°C- 55°C ~ + 150°C
RoHSYesYesYesYes
PackageTO-236-3SOT23-3SOT23-3SOT23-3
Lifecycle StatusObsoleteObsolete----
Current Collector IC Max100mA100mA----
Dc Current Gain Hfe Min IC Vce100 @ 3mA, 1V100 @ 3mA, 1V----
Frequency Transition600MHz600MHz----
Noise Figure Db Typ F6dB @ 60MHz6dB @ 60MHz----
Power Max330mW330mW----
Transistor TypeNPNNPN----
Voltage Collector Emitter Breakdown Max15V15V----
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