Diodes Incorporated FMMTH10TA RF BJT
FMMTH10TA by Diodes Incorporated · RF BJT · TO-236-3, SC-59, SOT-23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FMMTH10TA
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Obsolete
Datasheet
FMMTH10TA Datasheet
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Technical Specifications
Diodes Incorporated FMMTH10TA RF BJT technical specifications.
General
RoHS
ROHS3 Compliant
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
25 mA
Dc Current Gain Hfe Min IC Vce
60 @ 4mA, 10V
Frequency Transition
650 MHz
Moisture Sensitivity Level MSL
1 (Unlimited)
Noise Figure Db Typ F
3dB ~ 5dB @ 500MHz
Alternate Parts Comparison (FMMTH10TA vs FMMTH10TC vs ZTX325STOB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 200°C (TJ) |
| Current Collector IC Max | 25 mA | 25mA | 50mA |
| Dc Current Gain Hfe Min IC Vce | 60 @ 4mA, 10V | 60 @ 4mA, 10V | 25 @ 2mA, 1V |
| Frequency Transition | 650 MHz | 650MHz | 1.3GHz |
| Noise Figure Db Typ F | 3dB ~ 5dB @ 500MHz | 3dB ~ 5dB @ 500MHz | 5dB @ 500MHz |
| Power Max | 330 mW | 330mW | 350mW |
| Transistor Type | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 25 V | 25V | 15V |
| Action |
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