Diodes Incorporated DMTH43M8LFGQ-7 MOSFETs
MOSFET N-CH 40V PWRDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMTH43M8LFGQ-7
Base Model
Detailed Description
MOSFET N-CH 40V PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
DMTH43M8LFGQ-7 Datasheet
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Technical Specifications
Diodes Incorporated DMTH43M8LFGQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
3 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (DMTH43M8LFGQ-7 vs DMTH43M8LPSQ-13 vs DMTH43M8LPS-13 vs DMTH43M8LK3Q-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant with Exemption | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single Quad Drain Triple Source | Single | Single |
| Fall Time | 12.4 ns | 11 ns | 11 ns | 11 ns |
| Package | PowerVDFN-8 | Tape & Reel (TR) | PowerTDFN-8 | TO-252-3 |
| Pd Power Dissipation | 65.2 W | 83 W | 83 W | 88 W |
| Qg Gate Charge | 40.1 nC | 49 nC | 38.5 nC | 38.5 nC |
| Rds on Drain Source Resistance | 3 mOhms | 3.3 mOhms | 3.3 mOhms | 2.9 mOhms |
| Rise Time | 10.7 ns | 5.7 ns | 5.7 ns | 5.7 ns |
| Action |
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