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Diodes Incorporated DMT6009LPS-13 MOSFETs

MOSFET N-CHA 60V 10.6A POWERDI

150,000 ActiveDiodes IncorporatedPowerTDFN-8$0.98RoHS
DMT6009LPS-13 PowerTDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMT6009LPS-13
Part Number (MPN)
DMT6009LPS-13
Detailed Description
MOSFET N-CHA 60V 10.6A POWERDI
Package
PowerTDFN-8
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
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Technical Specifications

Diodes Incorporated DMT6009LPS-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
10.6 A
Rds on Drain Source Resistance
10 mOhms
Vgs Gate Source Voltage
- 16 V, + 16 V

Related Parts Comparison (DMT6009LPS-13 vs DMT3004LPS-13 vs DMT10H009LPS-13 vs DMT2004UPS-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
RoHSYesYesYesYes
PackagePowerTDFN-8PowerTDFN-8PowerTDFN-8PowerTDFN-8
TechnologySiSiSiSi
Unit Weight0.003386 oz0.003386 oz0.003422 oz0.003386 oz
Operating Temperature- 55°C ~ + 150°C--- 55°C ~ + 150°C- 55°C ~ + 150°C
Number of Channels1 Channel--1 Channel1 Channel
Channel ModeEnhancement--EnhancementEnhancement
ConfigurationSingle--SingleSingle
ID Continuous Drain Current10.6 A--90 A80 A
Pd Power Dissipation113 W--104 W3 W
Qg Gate Charge33.5 nC--40.2 nC53.7 nC
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