Diodes Incorporated DMT2004UPS-13 MOSFETs
MOSFET N-CH 24V 80A PWRDI5060-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT2004UPS-13
Detailed Description
MOSFET N-CH 24V 80A PWRDI5060-8
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
DMT2004UPS-13 Datasheet
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Technical Specifications
Diodes Incorporated DMT2004UPS-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
24 V
ID Continuous Drain Current
80 A
Rds on Drain Source Resistance
5 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (DMT2004UPS-13 vs DMT3004LPS-13 vs DMT10H009LPS-13 vs DMT6009LPS-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerTDFN-8 | PowerTDFN-8 | PowerTDFN-8 | PowerTDFN-8 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.003386 oz | 0.003386 oz | 0.003422 oz | 0.003386 oz |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 80 A | -- | 90 A | 10.6 A |
| Pd Power Dissipation | 3 W | -- | 104 W | 113 W |
| Qg Gate Charge | 53.7 nC | -- | 40.2 nC | 33.5 nC |
| Action |
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