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Diodes Incorporated DMT2004UPS-13 MOSFETs

MOSFET N-CH 24V 80A PWRDI5060-8

225,000 ActiveDiodes IncorporatedPowerTDFN-8$0.72
DMT2004UPS-13 PowerTDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMT2004UPS-13
Part Number (MPN)
DMT2004UPS-13
Detailed Description
MOSFET N-CH 24V 80A PWRDI5060-8
Package
PowerTDFN-8
Lifecycle Status
Active
Datasheet
PDF DMT2004UPS-13 Datasheet
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Technical Specifications

Diodes Incorporated DMT2004UPS-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
24 V
ID Continuous Drain Current
80 A
Rds on Drain Source Resistance
5 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V

Related Parts Comparison (DMT2004UPS-13 vs DMT3004LPS-13 vs DMT10H009LPS-13 vs DMT6009LPS-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSMD/SMT
RoHSYesYesYesYes
PackagePowerTDFN-8PowerTDFN-8PowerTDFN-8PowerTDFN-8
TechnologySiSiSiSi
Unit Weight0.003386 oz0.003386 oz0.003422 oz0.003386 oz
Operating Temperature- 55°C ~ + 150°C--- 55°C ~ + 150°C- 55°C ~ + 150°C
Number of Channels1 Channel--1 Channel1 Channel
Channel ModeEnhancement--EnhancementEnhancement
ConfigurationSingle--SingleSingle
ID Continuous Drain Current80 A--90 A10.6 A
Pd Power Dissipation3 W--104 W113 W
Qg Gate Charge53.7 nC--40.2 nC33.5 nC
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