Diodes Incorporated DMT32M5LFG-7 MOSFETs
MOSFET N-CH 30V 30A POWERDI3333
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMT32M5LFG-7
Base Model
Detailed Description
MOSFET N-CH 30V 30A POWERDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
DMT32M5LFG-7 Datasheet
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Technical Specifications
Diodes Incorporated DMT32M5LFG-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
1.4 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (DMT32M5LFG-7 vs DMT32M5LFG-13 vs DMT32M5LPS-13 vs DMT3009UFVW-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 23.9 ns | 23.9 ns | 23.9 ns | 1.6 ns |
| ID Continuous Drain Current | 100 A | 100 A | 150 A | 10.6 A |
| Package | PowerVDFN-8 | PowerVDFN-8 | PowerTDFN-8 | PowerVDFN-8 |
| Pd Power Dissipation | 50 W | 50 W | 100 W | 1.2 W |
| Qg Gate Charge | 67.7 nC | 67.7 nC | 68 nC | 14.6 nC |
| Rds on Drain Source Resistance | 1.4 mOhms | 1.4 mOhms | 1.6 mOhms | 11 mOhms |
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