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Diodes Incorporated DMT3003LFG-7 MOSFETs

MOSFET N-CH 30V 22A PWRDI3333

100 ActiveDiodes IncorporatedDMT3003LFGPowerVDFN-8$1.41
DMT3003LFG-7 PowerVDFN-8 package illustration

Same model may have multiple batches, images only for reference.

DMT3003LFG-7
Part Number (MPN)
DMT3003LFG-7
Base Model
Detailed Description
MOSFET N-CH 30V 22A PWRDI3333
Package
PowerVDFN-8
Lifecycle Status
Active
Datasheet
PDF DMT3003LFG-7 Datasheet
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Ordering Code Family

DMT3003LFG groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMT3003LFG-7 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
3.2 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMT3003LFG-7 vs DMT3003LFG-13 vs DMT3003LFGQ-13 vs DMT3009UFVW-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackagePowerVDFN-8PowerVDFN-8PowerVDFN-8PowerVDFN-8
TechnologySiSiSiSi
Unit Weight0.001058 oz0.001058 oz0.001058 oz0.001058 oz
Mounting TypeSMD/SMT--SMD/SMTSMD/SMT
Operating Temperature- 55°C ~ + 150°C--- 55°C ~ + 150°C- 55°C ~ + 150°C
Number of Channels1 Channel--1 Channel1 Channel
Channel ModeEnhancement--EnhancementEnhancement
ConfigurationSingle--SingleSingle
ID Continuous Drain Current100 A--100 A10.6 A
Pd Power Dissipation62 W--62 W1.2 W
Qg Gate Charge44 nC--44 nC14.6 nC
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