Diodes Incorporated DMG4800LSDQ-13 MOSFETs
MOSFET 2N-CH 30V 7.5A 8SOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG4800LSDQ-13
Detailed Description
MOSFET 2N-CH 30V 7.5A 8SOP
Package
SO-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMG4800LSDQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
7.5 A
Rds on Drain Source Resistance
16 mOhms
Vgs Gate Source Voltage
- 25 V, + 25 V
Alternate Parts Comparison (DMG4800LSDQ-13 vs DMG6301UDW-7 vs DMG1012T-7 vs DMG4800LSD-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Channels | 2 Channel | 2 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Package | SO-8 | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Pd Power Dissipation | 1.17 W | 370 mW | 280 mW | 1.17 W |
| Qg Gate Charge | 8.56 nC | 360 pC | 736.6 pC | 8.56 nC |
| Rds on Drain Source Resistance | 16 mOhms | 3.8 Ohms | 400 mOhms | 16 mOhms |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 25 V | 20 V | 30 V |
| Action |
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