Diodes Incorporated DMP56D0UFB-7 MOSFETs
MOSFET P-CH 50V 200MA 3DFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP56D0UFB-7
Base Model
Detailed Description
MOSFET P-CH 50V 200MA 3DFN
Package
X1-DFN1006-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMP56D0UFB-7 MOSFETs technical specifications.
General
Series
DMP56
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
50 V
ID Continuous Drain Current
200 mA
Rds on Drain Source Resistance
6 Ohms
Alternate Parts Comparison (DMP56D0UFB-7 vs DMP56D0UV-7 vs DMP56D0UFB-7B vs DMP4015SK3Q-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | DMP56 | DMP56 | DMP56 | DMP4015 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Dual | Single | Single |
| Fall Time | 15 ns | 15 ns | 15 ns | 137.9 nS |
| ID Continuous Drain Current | 200 mA | 160 mA | 200 mA | 35 A |
| Package | X1-DFN1006-3 | SOT-563-6 | X1-DFN1006-3 | TO-252-3 |
| Pd Power Dissipation | 425 mW | 400 mW | 425 mW | 3.5 W |
| Qg Gate Charge | 580 pC | 580 pC | 580 pC | 47.5 nC |
| Rds on Drain Source Resistance | 6 Ohms | 6 Ohms | 6 Ohms | 11 mOhms |
| Action |
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