Diodes Incorporated DMN2600UFB-7 MOSFETs
MOSFET N-CH 25V 1.3A 3DFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2600UFB-7
Detailed Description
MOSFET N-CH 25V 1.3A 3DFN
Package
X1-DFN1006-3
Lifecycle Status
Active
Datasheet
DMN2600UFB-7 Datasheet
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Technical Specifications
Diodes Incorporated DMN2600UFB-7 MOSFETs technical specifications.
General
Series
DMN26
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
25 V
ID Continuous Drain Current
1.3 A
Rds on Drain Source Resistance
600 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Related Parts Comparison (DMN2600UFB-7 vs DMN2250UFB-7B vs DMN2300UFB-7B vs DMN2990UFB-7B)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | X1-DFN1006-3 | X1-DFN1006-3 | X1-DFN1006-3 | X1-DFN1006-3 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Single | -- | -- | Single |
| ID Continuous Drain Current | 1.3 A | -- | -- | 780 mA |
| Pd Power Dissipation | 540 mW | -- | -- | 920 mW |
| Qg Gate Charge | 850 pC | -- | -- | 410 pC |
| Rds on Drain Source Resistance | 600 mOhms | -- | -- | 900 mOhms |
| Technology | Si | -- | -- | Si |
| Transistor Polarity | N-Channel | -- | -- | N-Channel |
| Action |
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