Diodes Incorporated DMN2990UFB-7B MOSFETs
MOSFET N-CH 20V 780MA 3DFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2990UFB-7B
Detailed Description
MOSFET N-CH 20V 780MA 3DFN
Package
X1-DFN1006-3
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN2990UFB-7B MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
780 mA
Rds on Drain Source Resistance
900 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN2990UFB-7B vs DMN2250UFB-7B vs DMN2300UFB-7B vs DMN62D1SFB-7B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | X1-DFN1006-3 | X1-DFN1006-3 | X1-DFN1006-3 | X1-DFN1006-3 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Single | -- | -- | Single |
| ID Continuous Drain Current | 780 mA | -- | -- | 410 mA |
| Pd Power Dissipation | 920 mW | -- | -- | 470 mW |
| Qg Gate Charge | 410 pC | -- | -- | 2.8 nC |
| Rds on Drain Source Resistance | 900 mOhms | -- | -- | 1.4 Ohms |
| Technology | Si | -- | -- | Si |
| Transistor Polarity | N-Channel | -- | -- | N-Channel |
| Action |
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