Diodes Incorporated DMP2035UVTQ-7 MOSFETs
MOSFET P-CH 20V 7.2A TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP2035UVTQ-7
Detailed Description
MOSFET P-CH 20V 7.2A TSOT26
Package
TSOT-26-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMP2035UVTQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
6 A
Rds on Drain Source Resistance
35 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (DMP2035UVTQ-7 vs DMP3105LVT-7 vs DMP6110SVT-7 vs DMP3050LVT-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 42 ns | -- | 42 ns | 12.4 ns |
| ID Continuous Drain Current | 6 A | -- | 7.3 A | 4.5 A |
| Pd Power Dissipation | 2 W | -- | 1.2 W | 1.6 W |
| Qg Gate Charge | 23.1 nC | -- | 17.2 nC | 10.5 nC |
| Rds on Drain Source Resistance | 35 mOhms | -- | 105 mOhms | 50 mOhms |
| Rise Time | 12 ns | -- | 23 ns | 4.9 ns |
| Action |
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