Diodes Incorporated DMN2041UVT-7 MOSFETs
MOSFET 2N-CH 20V 5.8A TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2041UVT-7
Detailed Description
MOSFET 2N-CH 20V 5.8A TSOT26
Package
TSOT-26-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN2041UVT-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
5.8 A
Rds on Drain Source Resistance
28 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN2041UVT-7 vs DMN3026LVTQ-7 vs DMN6040SVT-7 vs DMC25D1UVT-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| ID Continuous Drain Current | 5.8 A | 6.6 A | 5 A | -- |
| Pd Power Dissipation | 1.1 W | 1.5 W | 1.8 W | -- |
| Qg Gate Charge | 9.1 nC | 12.5 nC | 22.4 nC | -- |
| Rds on Drain Source Resistance | 28 mOhms | 23 mOhms | 44 mOhms | -- |
| Technology | Si | Si | Si | -- |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | -- |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz | -- |
| Action |
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