Diodes Incorporated DMG6601LVT-7 MOSFETs
MOSFET N/P-CH 30V 3.8A TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG6601LVT-7
Detailed Description
MOSFET N/P-CH 30V 3.8A TSOT26
Package
TSOT-26-6
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMG6601LVT-7 MOSFETs technical specifications.
General
Series
DMG6601
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3.8 A, 2.5 A
Rds on Drain Source Resistance
55 mOhms, 110 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (DMG6601LVT-7 vs DMG6602SVT-7 vs DMC25D1UVT-7 vs DMC25D0UVT-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 |
| Series | DMG6601 | DMG6602 | -- | -- |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 2 Channel | 2 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Dual | Dual | -- | -- |
| Fall Time | 15.6 ns, 2.2 ns | 3 ns | -- | -- |
| ID Continuous Drain Current | 3.8 A, 2.5 A | 3.4 A, 2.8 A | -- | -- |
| Maximum Operating Temperature C | + 150 | + 150 | -- | -- |
| Minimum Operating Temperature C | - 55 | - 55 | -- | -- |
| Pd Power Dissipation | 1.3 W | 840 mW | -- | -- |
| Action |
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