Diodes Incorporated DMN6040SVTQ-7 MOSFETs
MOSFET N-CH 60V 5A TSOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN6040SVTQ-7
Base Model
Detailed Description
MOSFET N-CH 60V 5A TSOT26
Package
TSOT-26-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN6040SVTQ-7 MOSFETs technical specifications.
General
Series
DMN6040
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
5 A
Rds on Drain Source Resistance
44 mOhms
Alternate Parts Comparison (DMN6040SVTQ-7 vs DMN6040SVTQ-13 vs DMN2041UVT-7 vs DMN3026LVTQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 2 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 5 A | 5 A | 5.8 A | 6.6 A |
| Package | TSOT-26-6 | SOT-23-6 | TSOT-26-6 | TSOT-26-6 |
| Pd Power Dissipation | 1.8 W | 1.8 W | 1.1 W | 1.5 W |
| Qg Gate Charge | 22.4 nC | 22.4 nC | 9.1 nC | 12.5 nC |
| Rds on Drain Source Resistance | 44 mOhms | 44 mOhms | 28 mOhms | 23 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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