Diodes Incorporated DMN33D9LV-7A MOSFETs
MOSFET 2N-CH 30V 0.35A SOT563
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN33D9LV-7A
Base Model
Detailed Description
MOSFET 2N-CH 30V 0.35A SOT563
Package
SOT-563-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN33D9LV-7A MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
350 mA
Rds on Drain Source Resistance
2.4 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN33D9LV-7A vs DMN33D8LV-7 vs DMN33D8LDW-7 vs DMN33D8LT-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-563-6 | SOT-563 | TSSOP-6 | SOT-523-3 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | - 55°C ~ + 150°C |
| Number of Channels | 2 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Dual | -- | -- | Single |
| ID Continuous Drain Current | 350 mA | -- | -- | 200 mA |
| Pd Power Dissipation | 430 mW | -- | -- | 300 mW |
| Qg Gate Charge | 1.23 nC | -- | -- | 550 pC |
| Rds on Drain Source Resistance | 2.4 Ohms | -- | -- | 5 Ohms |
| Technology | Si | -- | -- | Si |
| Action |
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