Diodes Incorporated DMN601VKQ-7 MOSFETs
MOSFET 2N-CH 60V 0.305A SOT563
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN601VKQ-7
Detailed Description
MOSFET 2N-CH 60V 0.305A SOT563
Package
SOT-563-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN601VKQ-7 MOSFETs technical specifications.
General
Series
DMN601
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
305 mA
Rds on Drain Source Resistance
2 Ohms
Alternate Parts Comparison (DMN601VKQ-7 vs DMN63D8LDWQ-7 vs DMN63D1LV-7 vs DMN33D9LV-7A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Single | Dual |
| ID Continuous Drain Current | 305 mA | 220 mA | 550 mA | 350 mA |
| Package | SOT-563-6 | TSSOP-6 | SOT-563-6 | SOT-563-6 |
| Pd Power Dissipation | 250 mW | 300 mW | 940 mW | 430 mW |
| Rds on Drain Source Resistance | 2 Ohms | 2.8 Ohms, 2.8 Ohms | 2 Ohms | 2.4 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.000212 oz | 0.000265 oz | 0.000212 oz | 0.000212 oz |
| Action |
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