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Diodes Incorporated DMN33D8LTQ-13 MOSFETs

MOSFET N-CH 30V 115MA SOT523

9,399 ActiveDiodes IncorporatedDMN33DSOT-523-3$0.07RoHS
DMN33D8LTQ-13 SOT-523-3 package illustration

Same model may have multiple batches, images only for reference.

DMN33D8LTQ-13
Part Number (MPN)
DMN33D8LTQ-13
Base Model
Detailed Description
MOSFET N-CH 30V 115MA SOT523
Package
SOT-523-3
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
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Ordering Code Family

DMN33D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN33D8LTQ-13 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
115 mA
Rds on Drain Source Resistance
5 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (DMN33D8LTQ-13 vs DMN33D8LV-7 vs DMN33D8LDW-7 vs DMN33D8LT-7)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageSOT-523-3SOT-563TSSOP-6SOT-523-3
Mounting TypeSMD/SMT----SMD/SMT
Operating Temperature- 55°C ~ + 150°C----- 55°C ~ + 150°C
Number of Channels1 Channel----1 Channel
Channel ModeEnhancement----Enhancement
ConfigurationSingle----Single
ID Continuous Drain Current115 mA----200 mA
Pd Power Dissipation300 mW----300 mW
Qg Gate Charge550 pC----550 pC
Rds on Drain Source Resistance5 Ohms----5 Ohms
TechnologySi----Si
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