Diodes Incorporated DMN2011UFDF-7 MOSFETs
MOSFET N-CH 20V 14.2A 6UDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2011UFDF-7
Detailed Description
MOSFET N-CH 20V 14.2A 6UDFN
Package
UDFN-6
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN2011UFDF-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
11.7 A
Rds on Drain Source Resistance
9.5 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Related Parts Comparison (DMN2011UFDF-7 vs DMN63D8LDWQ-7 vs DMN61D9UW-7 vs DMN61D8LVTQ-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 11.7 A | 220 mA | 340 mA | 630 mA |
| Package | UDFN-6 | TSSOP-6 | SOT-323 | SOT-23-6 |
| Pd Power Dissipation | 2.1 W | 300 mW | 440 mW | 1.09 W |
| Qg Gate Charge | 56 nC | 870 pC | 400 pC | 740 pC |
| Rds on Drain Source Resistance | 9.5 mOhms | 2.8 Ohms, 2.8 Ohms | 1.2 Ohms | 1.1 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Unit Weight | 0.002293 oz | 0.000265 oz | 0.000212 oz | 0.000282 oz |
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