Diodes Incorporated DMN1019USN-7 MOSFETs
MOSFET N-CH 12V 9.3A SC59
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN1019USN-7
Base Model
Detailed Description
MOSFET N-CH 12V 9.3A SC59
Package
SC59-3
Lifecycle Status
Active
Datasheet
DMN1019USN-7 Datasheet
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Technical Specifications
Diodes Incorporated DMN1019USN-7 MOSFETs technical specifications.
General
Series
DMN1019
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
9.3 A
Rds on Drain Source Resistance
10 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Related Parts Comparison (DMN1019USN-7 vs DMN1019USN-13 vs DMN55D0UT-7 vs DMN4034SSD-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Series | DMN1019 | DMN10 | DMN55 | DMN40 |
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Yes | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | 2 N-Channel (Dual) |
| Maximum Operating Temperature C | + 150 | + 150 | 150 | 150 |
| Minimum Operating Temperature C | - 55 | - 55 | -55 | -55 |
| Pd Power Dissipation | 1.2 W | 1.2 W | 200 mW | 1.25 W |
| Qg Gate Charge | 27.3 nC | 50.6 nC | 295 pC | 4.9 nC |
| Rds on Drain Source Resistance | 10 mOhms | 41 mOhms | 4 Ohms | 34 mOhms |
| Technology | Si | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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