Diodes Incorporated DMN1019USN-13 MOSFETs
MOSFET N-CH 12V 9.3A SC59
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN1019USN-13
Base Model
Detailed Description
MOSFET N-CH 12V 9.3A SC59
Package
SC-59-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN1019USN-13 MOSFETs technical specifications.
General
Series
DMN10
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
9.3 A
Rds on Drain Source Resistance
41 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Related Parts Comparison (DMN1019USN-13 vs DMN1019USN-7 vs DMN3033LSNQ-7 vs DMN3190LDW-13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Series | DMN10 | DMN1019 | DMN3033 | DMN31 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | 2 N-Channel (Dual) |
| Package | SC-59-3 | SC59-3 | SC-59-3 | Tape & Reel (TR) |
| Pd Power Dissipation | 1.2 W | 1.2 W | 1.4 W | 320 mW |
| Qg Gate Charge | 50.6 nC | 27.3 nC | 10.5 nC | 2 nC |
| Rds on Drain Source Resistance | 41 mOhms | 10 mOhms | 30 mOhms | 190 mOhms |
| Technology | Si | Si | Si | MOSFET (Metal Oxide) |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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