Diodes Incorporated DMG1013UWQ-13 MOSFETs
MOSFET P-CH 20V 820MA SOT323
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG1013UWQ-13
Base Model
Detailed Description
MOSFET P-CH 20V 820MA SOT323
Package
SOT-323
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMG1013UWQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
820 mA
Rds on Drain Source Resistance
1.5 Ohms
Vgs Gate Source Voltage
- 6 V, + 6 V
Related Parts Comparison (DMG1013UWQ-13 vs DMG1013UWQ-7 vs DMG1012UWQ-7 vs DMG1013UW-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-323 | SC-70,SOT-323 | SOT-323 | SOT-323 |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| ID Continuous Drain Current | 820 mA | 820 mA | -- | 820 mA |
| Pd Power Dissipation | 310 mW | 310 mW | -- | 310 mW |
| Qg Gate Charge | 622.4 pC | 622.4 pC | -- | 622.4 pC |
| Rds on Drain Source Resistance | 1.5 Ohms | 1.5 Ohms | -- | 750 mOhms |
| Technology | Si | Si | -- | Si |
| Transistor Polarity | P-Channel | P-Channel | -- | P-Channel |
| Action |
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