CEL (California Eastern Laboratories) UPA814T-T1 RF BJT
UPA814T-T1 by CEL (California Eastern Laboratories) · RF BJT · 6-SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
UPA814T-T1
Package
6-SO
Lifecycle Status
Obsolete
Datasheet
UPA814T-T1 Datasheet
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Technical Specifications
CEL (California Eastern Laboratories) UPA814T-T1 RF BJT technical specifications.
General
Package / Case
6-SO
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
100 mA
Dc Current Gain Hfe Min IC Vce
80 @ 3mA, 1V
Frequency Transition
9 GHz
Noise Figure Db Typ F
1.5dB @ 2GHz
Power Max
200 mW
Transistor Type
2 NPN (Dual)
Alternate Parts Comparison (UPA814T-T1 vs UPA812T-T1-A vs UPA810T-T1 vs UPA806T-T1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-SO | Tape & Reel | 6-TSSOP | 6-TSSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -65 °C ~ 150 °C | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Frequency Transition | 9 GHz | 7 GHz | 4.5 GHz | 12 GHz |
| Noise Figure Db Typ F | 1.5dB @ 2GHz | 1.4dB @ 1GHz | 1.2dB ~ 2.5dB @ 1GHz | 1.5dB ~ 2.5dB @ 2GHz |
| Transistor Type | 2 NPN (Dual) | 2 NPN (Dual) | 2 NPN (Dual) | 2 NPN (Dual) |
| Voltage Collector Emitter Breakdown Max | 6 V | 10 V | 12 V | 6 V |
| Current Collector IC Max | 100 mA | -- | 100 mA | 30 mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 3mA, 1V | -- | 70 @ 7mA, 3V | 75 @ 10mA, 3V |
| Power Max | 200 mW | -- | 200 mW | 200 mW |
| Action |
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